MT4435L

Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT4435L FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT4435L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 98@ VGS=-10V -30V -15 130 @ VGS=-4.5V D G S ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -15 - Pulse d b IDM -24 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.8 50 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,LTD. MT4...