Mos-Tech Semiconductor Co.,LTD.
MT4435BDY
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high d...
Mos-Tech Semiconductor Co.,LTD.
MT4435BDY
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-30V -8A
15@ VGS=-10V 20@ VGS=-4.5V
NOTE：The MT4435BDY is available in a lead-free package
G
ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125 ℃
Symbol
VDS VGS ID
Limit
-30 ±25 -8
- Pulse d b
IDM -40
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
-2.4 2.5
-55 to 150
S
D
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50 ℃/W
©2007 Mos-Tech Semiconductor
1
http//www.mtsemi.com
Mos-Tech Semiconductor Co.,LTD.
...
