MT3421

MT1 MOS-TECH Semiconductor Co.,LTD MT31 Single P-Channel Power MOSFET General Description This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance. These devices a re well suit ed for portable electronics applications: load s witching and power management, battery charging circuits and DC/DC conversion. D Features –4.3 A, –25 V. RDS(ON) = 0.08 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V Low gate charge (3.6 nC typical) High performance trench technology for extremely low RDS(ON) SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S SOT-23 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous ...