MT3405

Mos-Tech Semiconductor Co.,LTD. MT3405 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -2.0A 130@ VGS=-10V 150 @ VGS=-4.5V NOTE：The MT3405 is available in a lead-free package D S G S G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -2.6 - Pulse d b IDM -10 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.25 1.25 -55 to 150 Unit V V A A A W ← THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconduc...