MT3401A

MOS-TECH Semiconductor Co.,LTD P-Channel Enhancement Mode Field Effect Transistor MT3401A Product Summary VDS= -30V ID= -4.2A (VGS= -10V) ≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 75m @VGS= -4.5V ≦ ΩRDS(ON) 120m @VGS= -2.5V Applications： ▪ Power Management in Notebook Computer ▪ Portable Equipment and Battery Powered Systems Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. SOT-23-3L Package. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: ≦1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec. 2. Pulse width limited by maximum junction temperature. Rev2.0 M...