MT6680

MOS-TECH Semiconductor Co.,LTD MT6680 N-Channel Power MOSFET 30V, 15A, 9.0mΩ Features „ Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A „ HBM ESD protection level of 3KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant General Description This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating an...