MT4408L

Mos-Tech Semiconductor Co.,LTD. N-Channel Enhancement Mode Field Effect Transistor MT4408L FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT4408L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 20A 25@ VGS=4.5V 38@ VGS=2.5V S G D D G S ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 30 ±20 20 - Pulse d b IDM 48 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.7 55 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,LTD. MT4...