Document
MOS-TECH Semiconductor Co.,LTD
N-Channel Enhancement Mode Field Effect Transistor
MT1803
Features:
VDS=30V
℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V
High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired.
Applications:
Switching Applications.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
℃Tc=25 ℃Tc=25
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient
Notes:
≦1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
Rev1.0 Jan-30-2013
Ratings
30 20 60 160 40 50 -55 to 150
Units
V V A A A W
℃
Ratings
52
Unit
℃/W
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