MT6401

Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT6401 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -28V - 5.6A 45@ VGS=-10V 55 @ VGS=-4.5V NOTE：The MT6401 is available in a lead-free package D S G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Sym Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ bol VDS VGS ID Limit -28 ±20 -5.6 - Pulse d b IDM -25 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.5 1.5 -55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 90 ℃/W © 2 0 0 9 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconduc...