Document
MOS-TECH Semiconductor Co.,LTD
Feb 2010
MT3710
N-Channel Power® MOSFET
100V, 57A, 12mΩ
Features
• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant
General Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate .