MT3116

MOS-TECH Semiconductor Co.,LTD MT3116 N-Channel Power MOSFET 100V, 176A, 3.5mΩ Features Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extr emely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications DC-DC primary bridge DC-DC Synchronous rectification Hot swap D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) - Continuous - Pulsed TC = 25oC TC = 25oC TC = 25oC(Note 1a) EAS PD TJ, TSTG Single Pulsed Avalanche Energy Power Dissip...