CEM3109
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
-30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. Su...
