CEP110P03/CEB110P03
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -105.5A, RDS(ON) =...
CEP110P03/CEB110P03
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS -30
VGS ±20
-105.5 ID -69
IDM -422
96 PD 0.77
EAS IAS TJ,Tstg
612.5
35 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.3 62.5
...
