CED04N6

CED04N6/CEU04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 600 VGS ±30 ID 3.4 2.2 IDM 13.6 70 PD 0.56 EAS 242 IAS 4.4 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.8 50 Units V V A A A W W/ C mJ A C Units ...