CED04N6/CEU04N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V, 3.4A, RDS(ON) = 2.4Ω @V...
CED04N6/CEU04N6
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 600
VGS ±30
ID
3.4 2.2
IDM 13.6 70
PD 0.56
EAS 242
IAS 4.4
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.8 50
Units V V A A A W
W/ C mJ A C
Units ...