MMIS70R1K4P

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4Ω N-channel MOSFET  Description MMIS70R1K4P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 1.4 3 3.2 11 Unit V Ω V A nC  Package & Internal Circuit D GD S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMIS70R1K4PTH Marking Temp. Range 70R1K4P -55 ~ 150℃ Package TO-251-VS Packing Tube RoHS Status Halogen Free Jun. 2021 Revision 2.1 1 Magnachip Semiconductor Ltd. MMIS70R1K4P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS VDSS VGSS ID IDM PD EAS dv/dt ...