MMP65R190P

MMP65R190P Datasheet MMP65R190P 650V 0.19Ω N-channel MOSFET  Description MMP65R190P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 700 0.19 3 20 53  Features Unit V Ω V A nC GDS D G S  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMP65R190PTH Marking 65R190P Temp. Range -55 ~ 150℃ Package TO-220 Packing Tube RoHS Status Halogen Free May. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd. MMP65R190P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness VDSS VGSS ID IDM PD EAS dv/dt 650 ±30 20 12.7 60 154 485 50 V V A A A W mJ V/ns TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pul...