MMQ60R190P

MMQ60R190P Datasheet MMQ60R190P 600V 0.19Ω N-channel MOSFET  Description MMQ60R190P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.19 3 20 51 Unit V Ω V A nC  Package & Internal Circuit D G D GS G G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMQ60R190PTH Temp. Range -55 ~ 150℃ Package TO-247 Packing Tube RoHS Status Halogen Free Jan. 2021 Revision 1.2 1 Magnachip Semiconductor Ltd. MMQ60R190P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness VDSS VGSS ID IDM PD EAS dv/dt 600 ±30 20 12.7 60 154 420 50 V V A A A W mJ V/ns TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP li...