MDD1902

MDD1902 – Single N-Channel Trench MOSFET 100V MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ General Description The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1902 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) Jun. 2021. Version 1.2 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 40 A 25 A 80 A 83 W 33 200 mJ -55~150 oC Symbol RθJA RθJC Rating 50 1.5 Unit oC/W Magnachip Semiconductor Ltd. MDD1902 – Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDD1902RH Temp. Range -55~150oC Package DPAK Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Dra...