Trench MOSFET. MDD1902 Datasheet

MDD1902 MOSFET. Datasheet pdf. Equivalent

MDD1902 Datasheet
Recommendation MDD1902 Datasheet
Part MDD1902
Description Single N-channel Trench MOSFET
Feature MDD1902; MDD1902 – Single N-Channel Trench MOSFET 100V MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m.
Manufacture MagnaChip
Datasheet
Download MDD1902 Datasheet





MagnaChip MDD1902
MDD1902
Single N-channel Trench MOSFET 100V, 40A, 28
General Description
The MDD1902 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1902 is suitable device for DC/DC
Converters and general purpose applications.
Features
VDS = 100V
ID = 40A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 31mΩ @VGS = 6.0V
D
G
S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
TC=100oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case (1)
Nov. 2010. Version 1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
100
±20
40
25
80
83
33
200
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.5
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip MDD1902
Ordering Information
Part Number
MDD1902RH
Temp. Range
-55~150oC
Package
D-PAK
Packing
Tape & Reel
Rohs Status
Halogen Free
Electrical Characteristics (Tc =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
Rg
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 20A
TJ=125oC
VGS = 6.0V, ID = 20A
VDS = 5V, ID = 20A
VDS = 50V, ID = 20A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS=0V,VDS=0V,F=1MHz
VDS=50V, VGS=10V,
RL=3.2, RGEN=3.2
IS = 1A, VGS = 0V
IF = 20A, dl/dt = 100A/μs
Min Typ
Max Unit
100 -
2.0 3.0
-
4.0
V
-- 1
μA
- - ±0.1
- 21 28
- 32 40
- 23.5 31
- 55 - S
- 39.8 48
- 11
- nC
- 11.2
-
- 2087 2505
- 82
- pF
- 230
-
- 2.1 2.5 Ω
- 10.5
- 27.5
- 38.5
ns
- 14
- 0.7 1.2 V
- 63 76 ns
- 145 - nC
Nov. 2010. Version 1.0
2 MagnaChip Semiconductor Ltd.



MagnaChip MDD1902
100
6.0V ~ 10V
80
5.0V
60
4.5V
40
4.0V
20
3.5V
0
01234
V , Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
5
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
V =10V
GS
I =20A
D
0 25 50 75 100 125 150
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
40
30
VGS=6.0V
20 VGS=10V
10
0 10 20 30
I [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
60
50
125
40
30
20
4
25
68
VGS [V]
10
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
*Note ; VDS=5.0V
15
10
5
125
25
0
01234
VGS [V]
Fig.5 Transfer Characteristics
5
Nov. 2010. Version 1.0
3
10
1
0.1
0.01
1E-3
1E-4
125
1E-5
25
1E-6
0.0 0.2 0.4 0.6 0.8 1.0
-VSD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.





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