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MDP1921– Single N-Channel Trench MOSFET 100V
MDP1921
Single N-channel Trench MOSFET 100V, 120A, 4.5mΩ
General Description
The MDP1921 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1921 is suitable device for DC/DC Converter and general purpose applications.
Features
VDS = 100V ID = 120A @VGS = 10V RDS(ON)
< 4.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jun. 2013. Version 1.2
1
G S
Symbol VDSS VGSS
ID
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