Trench MOSFET. MDP1932 Datasheet

MDP1932 MOSFET. Datasheet pdf. Equivalent

MDP1932 Datasheet
Recommendation MDP1932 Datasheet
Part MDP1932
Description Single N-channel Trench MOSFET
Feature MDP1932; MDP1932– Single N-Channel Trench MOSFET 80V MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ.
Manufacture MagnaChip
Datasheet
Download MDP1932 Datasheet





MagnaChip MDP1932
MDP1932
Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ
General Description
The MDP1932 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1932 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 80V
ID = 120A @VGS = 10V
RDS(ON)
< 3.4 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC
TC=25oC
TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Aug. 2014. Version 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
80
±20
175
120
110
480
209
84
312.5
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.6
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip MDP1932
Ordering Information
Part Number
MDP1932TH
Temp. Range
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Ciss
Crss
Coss
td(on)
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Resistance
Rg
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 64V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
VDS = 40V, ID = 50A,
VGS = 10V
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 40V,
ID = 50A , RG = 3.0Ω
f=1 MHz
IS = 50A, VGS = 0V
IF = 50A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25is silicon limited
2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 25.0A, VGS = 10V.
Min Typ Max Unit
80 -
-
V
2.0 - 4.0
- - 1.0
μA
- - ±0.1
- 3.0 3.4 m
- 90 - S
- 105 -
- 30 -
- 22 -
- 7,200 -
- 50 -
- 1,550 -
- 31 -
- 65 -
- 48 -
- 30 -
- 3.0 -
nC
pF
ns
Ω
- 0.9 1.2 V
- 73
ns
- 161
nC
Aug. 2014. Version 1.1
2 MagnaChip Semiconductor Ltd.



MagnaChip MDP1932
200
180
160
140
120
100
80
60
40
20
0
0
6.0V
7.0V
8.0V
V = 10V
GS
5.0V
4.5V
4.0V
1234
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
5
2.5
Notes :
1. VGS = 10 V
2. ID = 50 A
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
0
VGS = 10V
50 100 150
ID, Drain Current [A]
200
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
18 Notes :
ID = 50A
16
14
12
10
8
6 TA = 25
4
2
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
Notes :
90 VDS = 10V
80
70
60
50 TA=25
40
30
20
10
0
012345678
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Aug. 2014. Version 1.1
3
Notes :
100
V = 0V
GS
10
TA=25
1
0.0 0.3 0.6 0.9 1.2 1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.





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