MDU1931

MDU1931 – Single N-Channel Trench MOSFET 80V MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ General Description The MDU1931 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DD DD DD DD D S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TA=25oC(3) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Ju...