MDF3752

MDF3752 – P-Channel Trench MOSFET MDF3752 P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ General Description The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features VDS = -40V ID = -36.5A @VGS = -10V RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V Applications Inverters General purpose applications D GDS Absolute Maximum Ratings (TC =25o) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Characteristics (Note 1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC (Note 2) Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -40 ±20 -36.5 -23.1 -90 35.7 14.3 12...