RU1HL8L

RU1HL8L P-Channel Advanced Power MOSFET Features -100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications Power Management DC/DC Converters P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -100 ±16 175 -55 to 175 -8 ① -32 -8 -...