RU30S5H

RU30S5H P-Channel Advanced Power MOSFET MOSFET Features -30V/-5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =56mΩ (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOP-8 Applications Power Management. Absolute Maximum Ratings Dual P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=-10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -30 ±20 150 -55 to 150 -2.5 ① -20 -5 -4.1 2 1.3 62.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. C– OCT., 2012 www.ruichips.com RU30S5H ...