RU205B

RU205B N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOT-23 Applications Load Switch PWM Applications Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 1.25 ① 20 5 4 1 0.64 125 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 www.ruich...