RU2520H

RU2520H N-Channel Advanced Power MOSFET MOSFET Features 25V/13A, RDS (ON) =9mΩ (Typ.) @ VGS=10V RDS (ON) =14.5mΩ (Typ.) @ VGS=4.5V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Available Pin Description SOP-8 Applications Power Management in Notebook Computer, and DC-DC Converters in Networking Systems. Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RθJA Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Rating ...