N-Channel Advanced Power MOSFET
RU3065L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VG...
Description
RU3065L
N-Channel Advanced Power MOSFET
MOSFET
Features
30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Application Systems
Pin Description
TO-252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2012
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