RU3568L

RU3568L N-Channel Advanced Power MOSFET Features 30V/60A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 175 -55 to 175 60 V °C °C A TC=25°C TC=25°C TC=10...