RU30D8H

RU30D8H N-Channel Advanced Power MOSFET MOSFET Features 30V/7A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =45mΩ (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOP-8 Applications SMPS Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 2.5 ① 28 7 5.6 2 1.3 62.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 www.ruichips.com RU30D8H Electrical Characterist...