Document
RUH3051M
N-Channel Advanced Power MOSFET
Features
• 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Advanced HEFET® Technology • Ultra Low On-Resistance • Excellent QgxRDS(on) Product • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Uninterruptible Power Supplies • Synchronus Rectification in DC/DC and AC/DC Converters
Pin Description
D D DD
SSS G PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID② Continuous Drain Current@TA(VGS=10V)③
Maximum Power Dissipation@TC PD
Maximum Power Dissipation@TA③
S
N-Channel MOSFET
Rating
Unit
TC=25°C
30 ±20 150 -55 to 1.