RU3010H

RU3010H N-Channel Advanced Power MOSFET MOSFET Features 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOP-8 Applications SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 4 ① 32 8 6 3.1 2 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 www.ruichips.com RU3010H Electrical Characteristics (TA=25...