N-Channel Advanced Power MOSFET
RU30120L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (...
Description
RU30120L
N-Channel Advanced Power MOSFET
MOSFET
Features
30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
DC-DC Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011
Rating
30 ±20 17...
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