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RU3582R Dataheets PDF



Part Number RU3582R
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU3582R DatasheetRU3582R Datasheet (PDF)

Features • 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant RU3582R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature .

  RU3582R   RU3582R



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Features • 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant RU3582R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. C– OCT., 2012 Rating 40 ±20 175 -55 to 175 ① 1.


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