Document
Features
• 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V
• Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant
RU3582R
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220
Applications
• Switching Application Systems • UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. C– OCT., 2012
Rating
40 ±20 175 -55 to 175
①
1.