Document
RU6199Q
N-Channel Advanced Power MOSFET
Features
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS ·High Speed Power Switching
Pin Description
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V)
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case
TC=25°C TC=100°C
Drain-Source Avalanche Ratings
③ Avalanche Energy ,Single Pulsed StoraEgeASTemperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co.,.