N-Channel Advanced Power MOSFET
RU60100R
N-Channel Advanced Power MOSFET
Features
• 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V
• Ultra Low On-Resistance
•...
Description
RU60100R
N-Channel Advanced Power MOSFET
Features
60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
Lead Free and Green Available
Applications
Switching Application Systems Inverter Systems
Pin Description
TO-220 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright Ruichips Semiconductor Co., L...
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