RU6080L

RU6080L N-Channel Advanced Power MOSFET MOSFET Features 60V/80A, RDS (ON) =7mΩ(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 Rating 60 ±25 175 -55 to 175 ② 80 ① 310 ② 80 65...