RU60E6H

RU60E6H N-Channel Advanced Power MOSFET MOSFET Features 60V/6A, RDS (ON) =31mΩ (Type) @ VGS=10V RDS (ON) =37mΩ (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected Lead Free and Green Available Pin Description SOP-8 Applications Power Management. Switch Applications. Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TC=25°C TC=70°C Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Rating 60 ±20 150 -55 to 150 6 ① 24 6 4.6 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– APR., 2011 w...