Document
RU60E25K
N-Channel Advanced Power MOSFET
Features
• 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.5V • ESD protected • Reliable and Rugged • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer, Portable Equipment • DC/DC Converters
Pin Description
G DS TO251
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd Rev. A– AUG.