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RU60E25K Dataheets PDF



Part Number RU60E25K
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU60E25K DatasheetRU60E25K Datasheet (PDF)

RU60E25K N-Channel Advanced Power MOSFET Features • 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.5V • ESD protected • Reliable and Rugged • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer, Portable Equipment • DC/DC Converters Pin Description G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS D.

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RU60E25K N-Channel Advanced Power MOSFET Features • 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.5V • ESD protected • Reliable and Rugged • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer, Portable Equipment • DC/DC Converters Pin Description G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– AUG.


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