N-Channel Advanced Power MOSFET
RU60101R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cel...
Description
RU60101R
N-Channel Advanced Power MOSFET
MOSFET
Features
60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
Low Gate Charge
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Application Systems Inverter Systems
Pin Description
TO-220 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– JUN., 20...
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