RU60E16R

RU60E16R N-Channel Advanced Power MOSFET MOSFET Features 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Pin Description TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±20 175 -55 to 175 ① 16 ② 64 ① 16 13 42 21 3.5 30 Unit V °C °C A A A W W ...