RU60E25R

RU60E25R N-Channel Advanced Power MOSFET MOSFET Features 60V/25A, RDS (ON) =35mΩ(Typ.)@VGS=10V Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications Power Management Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±20 175 -55 to 175 ① 25 ② 100 ① 25 20 54 27 2.8 42 Unit V °C °C A A A W W °C/W mJ Copyright© Ruichips...