RU7550S

RU7550S N-Channel Advanced Power MOSFET MOSFET Features 75V/55A, RDS (ON) =11mΩ(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications DC-DC Converters and Off-line UPS Automotive Load Control Electronic Power Steering System Electronic Valve Train System Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 75 ±25 175 -55 to ...