RU140N10R

RU140N10R N-Channel Advanced Power MOSFET Features 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated 100% avalanche tested Applications ·Switching applications Pin Description TO-220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±25 175 -55 to 175 ① 140 ② 560 ① 140 ① 100 250 125 0.6 1.1 Unit V °C °C A A W °C/W J Copyright Ruichips Semiconductor Co....