RU1H35S

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. B– FEB., 2011 Rating 100 ±25 175 -55 to 175 40 ① 160 ② 40 27 111 56 1.35 Unit V...