RU1HE3H

RU1HE3H N-Channel Advanced Power MOSFET MOSFET Features 100V/3A, RDS (ON) =135mΩ (Typ.) @ VGS=10V RDS (ON) =150mΩ (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected Lead Free and Green Available Pin Description SOP-8 Applications Converters LED Backlight Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 3 ① 9 3 2.4 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– JUL., 2011 www.ruichips...