RU80N15Q

RU80N15Q N-Channel Advanced Power MOSFET Features · 150V/80A RDS (ON)=31mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Pin Description TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 150 ±25 175 -55 to 175 ① 80 300 ② ① 80 60 180 90 0.83 169 ...