N-Channel Advanced Power MOSFET
RU6Z8R
N-Channel Advanced Power MOSFET
Features
• 650V/8A,
RDS (ON) =900mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design...
Description
RU6Z8R
N-Channel Advanced Power MOSFET
Features
650V/8A,
RDS (ON) =900mΩ(Typ.)@VGS=10V
Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
High efficiency switch mode power supplies Lighting
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2012
1
N-Channel MOSFET
Rating
Unit
TC=25°C
650 ±30 150 -55 t...
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