MDV3605

MDV3605– Single P-Channel Trench MOSFET MDV3605 Single P-Channel Trench MOSFET, -30V, -20A, 18.0mΩ General Description The MDV3605 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. DD DD DD DD Features  VDS = -30V  ID = -20A @VGS = -10V  RDS(ON) < 18.0mΩ @VGS = -10V < 25.0mΩ @VGS = -4.5V Applications  Load Switch  General purpose applications  Smart Module for Note PC Battery D G S SSG GS SS PDFN33 S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25 oC (Package limited) TC=25 oC (Silicon limited) TC=70 oC (Silicon limited) TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -30 ±25 -20.0 -29.0 -24.0 -10.8(3) -8.8 -80.0 25.0 16 3.4(3) 2.2 60.5 -55~150 Unit V V A A W mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jan. 2021. Version 1.3 (Note 1) 1 Symbol RθJA RθJC Rating 36 5.0 Unit oC/W Magnachip Semiconductor Ltd. MDV3605– Single P-Channel Trench MOSFET Ordering Information Part Number MDV3605URH Temp. Range -55~150oC Package PDFN33 Packing Tape &...