DatasheetsPDF.com

MDS5601 Dataheets PDF



Part Number MDS5601
Manufacturers MagnaChip
Logo MagnaChip
Description Dual N-Channel Trench MOSFET
Datasheet MDS5601 DatasheetMDS5601 Datasheet (PDF)

MDS5601 – Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ General Description The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS5601 is suitable for DC/DC converter and general purpose applications. Features à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D.

  MDS5601   MDS5601



Document
MDS5601 – Dual N-Channel Trench MOSFET MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ General Description The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS5601 is suitable for DC/DC converter and general purpose applications. Features à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON) < 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested 8(D17)(D16)(D2)5(D2) 4(G2) 2(G13) (S2) 1(S1) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G1 TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case July. 2010. Version.


MDS5652 MDS5601 MDU1402


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)